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| DGS 15-018CS DGSK 32-018CS Gallium Arsenide Schottky Rectifier Second generation VRRM = 180 V IDC = 24 A CJunction = 21 pF Type DGS 15-018CS Marking on product 15A180AS Single Circuit A C Package TO-252 AA A A TAB DGSK 32-018CS DGSK 32-018CS Common cathode A C A TO-263 AB A A TAB A = Anode, TAB = Cathode Diode Symbol VRRM/RSM IFAV IFAV IFSM Ptot Symbol VF IR IRM t rr CJ RthJC Data according to IEC 60747 and per diode unless otherwise specified Features Conditions Maximum Ratings 180 TC = 25C; DC TC = 90C; DC TVJ = 45C; tp = 10 ms (50 Hz), sine TC = 25C Conditions IF = 7.5 A; IF = 7.5 A; VR = VRRM; VR = VRRM; TVJ = 25C TVJ = 125C TVJ = 25C TVJ = 125C 24 15 80 34 V A A A W Characteristic Values min. typ. max. 1.25 1.0 0.25 1.1 23 21 1.5 V V 0.25 mA mA A ns pF 4.4 K/W GaAs Schottky Diode with Enhanced Barrier Height: * lowest operating forward voltage drop due to additional injection of minority carriers * high switching speed - low junction capacity of GaAs diode independent from temperature - short and low reverse recovery current peak due to short lifetime of minority carriers - soft turn off Surface Mount Packages: * Incorporating Single and Dual Diode Topologies * Industry Standard Package Outlines * Epoxy meets UL 94V-0 Applications IF = 5 A; -diF/dt = 150 A/s; VR = 100 V; TVJ = 125C VR = 100 V; TVJ = 125C Component Symbol TVJ Tstg Symbol Weight Conditions TO-252 TO-263 Conditions Maximum Ratings -55...+175 -55...+150 C C Switched Mode Power Supplies: * AC-DC converters * DC-DC converters with: * high switching frequency * high efficiency * low EMI for use e. g. in: * telecom * computer * automotive equipment Characteristic Values min. typ. max. 0.3 2 g g 0520 IXYS reserves the right to change limits, Conditions and dimensions. (c) 2005 IXYS All rights reserved 1-2 DGS 15-018CS DGSK 32-018CS 40 10 CJ IF A 1 TVJ = 125C 25C 300 pF Outlines TO-252 AA 100 0.1 1 Anode 2 NC 3 Anode 4 Cathode TVJ = 125C 0.01 0.0 0.5 1.0 VF V 1.5 10 0.1 Dim. 1 10 100 V 1000 VR Fig. 1 typ. forward characteristics Fig. 2 typ. junction capacity versus blocking voltage 10 TO-252 K/W 1 ZthJC Single Pulse TO-263 A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 Millimeter Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 Inches Min. Max. 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 0.025 0.040 0.035 0.050 0.100 0.115 0.1 Outlines TO-263 AB 0.01 DGS15-018CS 0.00001 0.0001 0.001 0.01 0.1 1 t s 10 Fig. 3 typ. thermal impedance junction to case 1. 2. 3. 4. Gate Collector Emitter Collector Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 0520 .029 IXYS reserves the right to change limits, Conditions and dimensions. (c) 2005 IXYS All rights reserved 2-2 |
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